Dynamics of optically stored charges in InGaAs quantum dots

Y. Ducommun, M. Kroutvar, J. J. Finley, M. Bichler, A. Zrenner, G. Abstreiter

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We investigate a charge storage device based on InGaAs quantum dots, that utilizes optical charge generation and readout of the stored charge distribution. A detailed analysis of the temporal evolution of the charge storage spectra is presented as a function of lattice temperature. Persistent (≫25 μs) wavelength selective storage of electrons is demonstrated for temperatures up to T=90 K. Resonantly stored holes are found to thermally redistribute among the quantum dot ensemble for T≥60 K over microsecond timescales. Our results provide new insight into the dynamics of resonantly stored charge and the temperature-induced modifications of the absorption process for self-assembled quantum dots.

Original languageEnglish
Pages (from-to)886-891
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
StatePublished - Mar 2004
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 14 Jul 200318 Jul 2003


  • Charge storage
  • Luminescence spectroscopy
  • Quantum dots
  • Thermal redistribution


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