Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

C. Lingk; G. Von Plessen; J. Feldmann; K. Stock; M. Arzberger; G. Böhm; M. C. Amann; G. Abstreiter

doi:10.1063/1.126689

Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

C. Lingk
, G. Von Plessen
, J. Feldmann
, K. Stock
, M. Arzberger
, G. Böhm
, M. C. Amann
, G. Abstreiter

Ludwig-Maximilians-Universität München
Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 10⁴ cm^-1 is determined for 800 mn excitation with 1.5 μJ/cm² pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.

Original language	English
Pages (from-to)	3507-3509
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	24
DOIs	https://doi.org/10.1063/1.126689
State	Published - 12 Jun 2000

Access to Document

10.1063/1.126689

Cite this

@article{719475eadd16456aaac6433c2c08edcb,

title = "Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots",

abstract = "We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 {\texttimes} 104 cm-1 is determined for 800 mn excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.",

author = "C. Lingk and \{Von Plessen\}, G. and J. Feldmann and K. Stock and M. Arzberger and G. B{\"o}hm and Amann, \{M. C.\} and G. Abstreiter",

year = "2000",

month = jun,

day = "12",

doi = "10.1063/1.126689",

language = "English",

volume = "76",

pages = "3507--3509",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

AU - Lingk, C.

AU - Von Plessen, G.

AU - Feldmann, J.

AU - Stock, K.

AU - Arzberger, M.

AU - Böhm, G.

AU - Amann, M. C.

AU - Abstreiter, G.

PY - 2000/6/12

Y1 - 2000/6/12

N2 - We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 104 cm-1 is determined for 800 mn excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.

AB - We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 104 cm-1 is determined for 800 mn excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.

UR - https://www.scopus.com/pages/publications/0001099565

U2 - 10.1063/1.126689

DO - 10.1063/1.126689

M3 - Article

AN - SCOPUS:0001099565

SN - 0003-6951

VL - 76

SP - 3507

EP - 3509

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

Abstract

Access to Document

Other files and links

Fingerprint

Cite this