Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

C. Lingk; G. Von Plessen; J. Feldmann; K. Stock; M. Arzberger; G. Böhm; M. C. Amann; G. Abstreiter

doi:10.1063/1.126689

Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

C. Lingk, G. Von Plessen, J. Feldmann, K. Stock, M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter

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Abstract

We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 10⁴ cm^-1 is determined for 800 mn excitation with 1.5 μJ/cm² pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.

Original language	English
Pages (from-to)	3507-3509
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	24
DOIs	https://doi.org/10.1063/1.126689
State	Published - 12 Jun 2000

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title = "Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots",

abstract = "We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 104 cm-1 is determined for 800 mn excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.",

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AU - Lingk, C.

AU - Von Plessen, G.

AU - Feldmann, J.

AU - Stock, K.

AU - Arzberger, M.

AU - Böhm, G.

AU - Amann, M. C.

AU - Abstreiter, G.

PY - 2000/6/12

Y1 - 2000/6/12

N2 - We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 104 cm-1 is determined for 800 mn excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.

AB - We investigate the dynamics of amplified spontaneous emission (ASE) in self-assembled InAs/ GaAs quantum dots, using pulsed optical excitation of an edge-emitting sample at room temperature. A material gain of 1.5 × 104 cm-1 is determined for 800 mn excitation with 1.5 μJ/cm2 pulses. Using photoluminescence up-conversion, we show that increases in both electron-hole pair density and photon density in the excited stripe cause a significant decrease in the decay time from 2.2 ns, corresponding to spontaneous emission, to about 0.9 ns, corresponding to stimulated emission or ASE. A carrier capture time of 10 ps limits the onset of the ASE process for short stripe lengths.

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Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

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