TY - JOUR
T1 - Dynamic Degradation in MOSFET’s—Part II
T2 - Application in the Circuit Environment
AU - Weber, Werner
AU - Brox, Martin
AU - Künemund, Thomas
AU - Mühlhoff, Hans Martin
AU - Schmitt-Landsiedel, Doris
PY - 1991/8
Y1 - 1991/8
N2 - This part of the paper classifies the physical effects discussed in Part I with respect to real operation of devices in circuits from an engineer’s viewpoint. Stress results from different kinds of logic stages are discussed and relations Set up between static and dynamic lifetimes. It is shown that within certain limited error boundaries, the static approach is essentially valid as long as stress conditions are considered that are oriented to operation in digital logic. The transmission gate is investigated separately, as here specific phenomena, caused by bidirectional stress must be considered.
AB - This part of the paper classifies the physical effects discussed in Part I with respect to real operation of devices in circuits from an engineer’s viewpoint. Stress results from different kinds of logic stages are discussed and relations Set up between static and dynamic lifetimes. It is shown that within certain limited error boundaries, the static approach is essentially valid as long as stress conditions are considered that are oriented to operation in digital logic. The transmission gate is investigated separately, as here specific phenomena, caused by bidirectional stress must be considered.
UR - http://www.scopus.com/inward/record.url?scp=0026206480&partnerID=8YFLogxK
U2 - 10.1109/16.119026
DO - 10.1109/16.119026
M3 - Article
AN - SCOPUS:0026206480
SN - 0018-9383
VL - 38
SP - 1859
EP - 1867
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
ER -