Dynamic current boosting technique of flipped voltage follower for low_dropout regulator

Fatemeh Abdi, Yasin Bastan, Parviz Amiri, Ralph Kennel, Manfred Reddig

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A low-dropout voltage regulator is presented with the DCB-FVF structure for SMPS applications and is simulated in 0.18µm CMOS technology. Proposed LDO uses an auxiliary FVF circuit to ensure the stability of the circuit. An enhancement circuit of dynamic current identifies the slew rate, improves the output transient response and reduces the ripples of output voltage during sudden changes in system. The dropout voltage of the LDO is 100mV for 1.1-1.5V input voltage. The output voltage is determined with ripple less than 40.22 mV and the rise and fall times equal to 500ns below 0.7 µs.

Original languageEnglish
Title of host publicationPCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019
EditorsMartina Amrhein, Anna Schulze Niehoff
PublisherMesago PCIM GmbH
Pages1532-1537
Number of pages6
ISBN (Print)9783800749386
StatePublished - 2019
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2019 - Nuremberg, Germany
Duration: 7 May 20199 May 2019

Publication series

NamePCIM Europe Conference Proceedings
ISSN (Electronic)2191-3358

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2019
Country/TerritoryGermany
CityNuremberg
Period7/05/199/05/19

Fingerprint

Dive into the research topics of 'Dynamic current boosting technique of flipped voltage follower for low_dropout regulator'. Together they form a unique fingerprint.

Cite this