Dynamic characteristics of novel super-junction LDMOS switches under charge imbalance conditions

K. Permthammasin, G. Wachutka, M. Schmitt, H. Kapels

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The inductive switching performance of a smart super-junction (SJ) LDMOS switch is simulated and analysed, together with the reverse recovery properties of its internal diode. The SJ power switch under investigation differs from the conventional one in the so-called SJ structure which, in this case, consists of an array of p-type round pillars embedded in the ntype drift region. In view of the tolerances achievable in the present fabrication technology, the effect of slightly unbalanced doping charges in the SJ structure is of utmost importance and, hence, studied in detail. Two different SJ structures have been designed to tackle the effect of substrate-aided depletion on the blocking capability of the SJ switch. The 3D-simulation results reveal that a proper design of the SJ structure not only suppresses the substrate effect, but also enhances the switching capability of the SJ switch.

Original languageEnglish
Title of host publication2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
PublisherIEEE Computer Society
Pages187-190
Number of pages4
ISBN (Print)1424401178, 9781424401178
DOIs
StatePublished - 2006
Event2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, Serbia
Duration: 14 May 200617 May 2006

Publication series

Name2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Conference

Conference2006 25th International Conference on Microelectronics, MIEL 2006
Country/TerritorySerbia
CityBelgrade
Period14/05/0617/05/06

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