TY - GEN
T1 - Dynamic characterisation and optimisation of multiply contacted power busbars
AU - Basler, Vanessa
AU - Wagner, Andreas
AU - Hoelzl, Wolfgang
AU - Wachutka, Gerhard
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/6/22
Y1 - 2018/6/22
N2 - Today's semiconductor power modules have become highly efficient thanks to fast switching modulation techniques, which are based on the safe control of high power densities in the commutation circuit. This requires, among others, that the structure and topography of the interconnects and busbars has to be optimised with a view to reducing current crowding and local eddy currents. For the analysis of multiply-contacted busbars, the concept of a generalised impedance operator proves to be the appropriate approach to setting up circuit-level models of entire power modules. Our paper is intended to show how the transient inductive behaviour of power busbars can be properly characterised and, then, optimised with a revisited formulation of the commonly used inductance and capacitance matrix.
AB - Today's semiconductor power modules have become highly efficient thanks to fast switching modulation techniques, which are based on the safe control of high power densities in the commutation circuit. This requires, among others, that the structure and topography of the interconnects and busbars has to be optimised with a view to reducing current crowding and local eddy currents. For the analysis of multiply-contacted busbars, the concept of a generalised impedance operator proves to be the appropriate approach to setting up circuit-level models of entire power modules. Our paper is intended to show how the transient inductive behaviour of power busbars can be properly characterised and, then, optimised with a revisited formulation of the commonly used inductance and capacitance matrix.
UR - https://www.scopus.com/pages/publications/85049947063
U2 - 10.1109/ISPSD.2018.8393650
DO - 10.1109/ISPSD.2018.8393650
M3 - Conference contribution
AN - SCOPUS:85049947063
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 252
EP - 255
BT - 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Y2 - 13 May 2018 through 17 May 2018
ER -