DX behaviour of Si donors in AlGaN alloys

Martin S. Brandt; Roland Zeisel; Sebastian T.B. Gönnenwein; Martin W. Bayerl; Martin Stutzmann

doi:10.1002/pssb.200301521

DX behaviour of Si donors in AlGaN alloys

Martin S. Brandt
, Roland Zeisel
, Sebastian T.B. Gönnenwein
, Martin W. Bayerl
, Martin Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al_0.75Ga_0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.

Original language	English
Pages (from-to)	13-19
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	235
Issue number	1
DOIs	https://doi.org/10.1002/pssb.200301521
State	Published - Jan 2003

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title = "DX behaviour of Si donors in AlGaN alloys",

abstract = "Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.",

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AU - Brandt, Martin S.

AU - Zeisel, Roland

AU - Gönnenwein, Sebastian T.B.

AU - Bayerl, Martin W.

AU - Stutzmann, Martin

PY - 2003/1

Y1 - 2003/1

N2 - Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.

AB - Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.

UR - https://www.scopus.com/pages/publications/1342283807

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DO - 10.1002/pssb.200301521

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

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DX behaviour of Si donors in AlGaN alloys

Abstract

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