TY - JOUR
T1 - DX behaviour of Si donors in AlGaN alloys
AU - Brandt, Martin S.
AU - Zeisel, Roland
AU - Gönnenwein, Sebastian T.B.
AU - Bayerl, Martin W.
AU - Stutzmann, Martin
PY - 2003/1
Y1 - 2003/1
N2 - Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.
AB - Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.
UR - http://www.scopus.com/inward/record.url?scp=1342283807&partnerID=8YFLogxK
U2 - 10.1002/pssb.200301521
DO - 10.1002/pssb.200301521
M3 - Article
AN - SCOPUS:1342283807
SN - 0370-1972
VL - 235
SP - 13
EP - 19
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 1
ER -