DX behaviour of Si donors in AlGaN alloys

Martin S. Brandt, Roland Zeisel, Sebastian T.B. Gönnenwein, Martin W. Bayerl, Martin Stutzmann

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.

Original languageEnglish
Pages (from-to)13-19
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - Jan 2003


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