DX behaviour of Si donors in AlGaN alloys

Martin S. Brandt, Roland Zeisel, Sebastian T.B. Gönnenwein, Martin W. Bayerl, Martin Stutzmann

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light-induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation-recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al0.75Ga0.25N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.

Original languageEnglish
Pages (from-to)13-19
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume235
Issue number1
DOIs
StatePublished - Jan 2003

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