Drift mobility of long-living excitons in coupled GaAs quantum wells

A. Gärtner; A. W. Holleitner; J. P. Kotthaus; D. Schuh

doi:10.1063/1.2267263

Drift mobility of long-living excitons in coupled GaAs quantum wells

A. Gärtner, A. W. Holleitner, J. P. Kotthaus, D. Schuh

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Abstract

The authors report on high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of 10⁵ cm²/eV s is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.

Original language	English
Article number	052108
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2267263
State	Published - 2006
Externally published	Yes

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abstract = "The authors report on high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of 105 cm2/eV s is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.",

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AU - Gärtner, A.

AU - Holleitner, A. W.

AU - Kotthaus, J. P.

AU - Schuh, D.

PY - 2006

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AB - The authors report on high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of 105 cm2/eV s is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.

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JO - Applied Physics Letters

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ER -

Drift mobility of long-living excitons in coupled GaAs quantum wells

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