DOPING OF AMORPHOUS SILICON BY ION IMPLANTATION.

G. Mueller, S. Kalbitzer, W. E. Spear, P. G. Le Comber

Research output: Contribution to conferencePaperpeer-review

21 Scopus citations

Abstract

The implantation of P, B and Ne ions into a-Si has been investigated at 300K and 520K. Specimens were prepared by the glow discharge decomposition of silane. It is shown that by means of 'hot' implantations wide-ranging control of the electrical properties can be achieved in a-Si, smaller efficiency of doping by implantation are discussed.

Original languageEnglish
Pages442-446
Number of pages5
StatePublished - 1977
Externally publishedYes
EventAmorphous and Liq Semicond, Proc of the Int Conf, 7th - Edinburgh, Engl
Duration: 27 Jun 19771 Jul 1977

Conference

ConferenceAmorphous and Liq Semicond, Proc of the Int Conf, 7th
CityEdinburgh, Engl
Period27/06/771/07/77

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