Abstract
The purpose of this talk is to review our present understanding of the doping process in a-Si:H and a:Ge:H, based on recent investigations of the chemical composition and the electronic properties of these materials. Using electron spin resonance, it has been possible to directly observe phosphorus and arsenic donor states and to deduce a fairly detailed model for the electronic density of states near the conduction band mobility edge in n-type samples. The common experimental features observed in the various dopant-host pairs are used to discuss possible microscopic mechanisms for the doping process.
| Original language | English |
|---|---|
| Title of host publication | Key Eng Mater |
| Pages | 894 |
| Number of pages | 1 |
| Volume | 13 |
| Edition | pt 3 |
| State | Published - 1986 |
| Externally published | Yes |
| Event | Int Conf on Met and Semicond Glasses (MSG-86) - Hyderabad, India Duration: 16 Dec 1986 → 20 Dec 1986 |
Conference
| Conference | Int Conf on Met and Semicond Glasses (MSG-86) |
|---|---|
| City | Hyderabad, India |
| Period | 16/12/86 → 20/12/86 |