Dopant states and recombination in compensated a-Si:H

Martin Stutzmann; David K. Biegelsen; Robert A. Street

doi:10.1016/0022-3093(85)90741-0

Dopant states and recombination in compensated a-Si:H

Martin Stutzmann, David K. Biegelsen, Robert A. Street

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Abstract

The role of gap states introduced by compensation of a-Si:H for the trapping and recombination processes in this material are examined using magnetic resonance techniques (LESR and ODMR). It is found that neutral donor states rather than conduction band tail states are the dominant electron traps for high compensation levels. A new ODMR resonance is observed and interpreted as due to exchange coupled electron-hole pairs.

Original language	English
Pages (from-to)	647-650
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	77-78
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(85)90741-0
State	Published - 2 Dec 1985
Externally published	Yes

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title = "Dopant states and recombination in compensated a-Si:H",

abstract = "The role of gap states introduced by compensation of a-Si:H for the trapping and recombination processes in this material are examined using magnetic resonance techniques (LESR and ODMR). It is found that neutral donor states rather than conduction band tail states are the dominant electron traps for high compensation levels. A new ODMR resonance is observed and interpreted as due to exchange coupled electron-hole pairs.",

author = "Martin Stutzmann and Biegelsen, {David K.} and Street, {Robert A.}",

note = "Funding Information: *Work supported by the Solar Energy Research Institute.",

year = "1985",

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doi = "10.1016/0022-3093(85)90741-0",

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T1 - Dopant states and recombination in compensated a-Si:H

AU - Stutzmann, Martin

AU - Biegelsen, David K.

AU - Street, Robert A.

N1 - Funding Information: *Work supported by the Solar Energy Research Institute.

PY - 1985/12/2

Y1 - 1985/12/2

N2 - The role of gap states introduced by compensation of a-Si:H for the trapping and recombination processes in this material are examined using magnetic resonance techniques (LESR and ODMR). It is found that neutral donor states rather than conduction band tail states are the dominant electron traps for high compensation levels. A new ODMR resonance is observed and interpreted as due to exchange coupled electron-hole pairs.

AB - The role of gap states introduced by compensation of a-Si:H for the trapping and recombination processes in this material are examined using magnetic resonance techniques (LESR and ODMR). It is found that neutral donor states rather than conduction band tail states are the dominant electron traps for high compensation levels. A new ODMR resonance is observed and interpreted as due to exchange coupled electron-hole pairs.

UR - http://www.scopus.com/inward/record.url?scp=0022181615&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(85)90741-0

DO - 10.1016/0022-3093(85)90741-0

M3 - Article

AN - SCOPUS:0022181615

SN - 0022-3093

VL - 77-78

SP - 647

EP - 650

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Dopant states and recombination in compensated a-Si:H

Abstract

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