TY - JOUR
T1 - Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates
AU - Bennarndt, Wolfgang
AU - Boehm, Gerhard
AU - Amann, Markus Christian
N1 - Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2016/2/15
Y1 - 2016/2/15
N2 - We investigate the molecular beam epitaxial growth of GaAsBi and GaInAsBi layers on GaAs and InP-substrates as the materials are intended to serve as an active region in optoelectronic devices. The layers were grown at substrate temperatures between 250-400 °C and for all layers the growth rate was kept at a value of 1 ML/s. We show that bismuth incorporation into Ga(In)As is independent of the applied arsenic (As4) overpressure and can be allocated to different growth domains depending solely on the parameters bismuth flux and substrate temperature, respectively. The maximum bismuth content that could be incorporated was as high as 20.0% in GaAs.
AB - We investigate the molecular beam epitaxial growth of GaAsBi and GaInAsBi layers on GaAs and InP-substrates as the materials are intended to serve as an active region in optoelectronic devices. The layers were grown at substrate temperatures between 250-400 °C and for all layers the growth rate was kept at a value of 1 ML/s. We show that bismuth incorporation into Ga(In)As is independent of the applied arsenic (As4) overpressure and can be allocated to different growth domains depending solely on the parameters bismuth flux and substrate temperature, respectively. The maximum bismuth content that could be incorporated was as high as 20.0% in GaAs.
KW - A3. Molecular beam epitaxy
KW - B1. Alloys
KW - B1. Bismuth compounds
KW - B2. Semiconducting III-V materials
UR - http://www.scopus.com/inward/record.url?scp=84950248846&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.11.021
DO - 10.1016/j.jcrysgro.2015.11.021
M3 - Article
AN - SCOPUS:84950248846
SN - 0022-0248
VL - 436
SP - 56
EP - 61
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -