Discretization of the Multiscale Semiconductor Boltzmann Equation by Diffusive Relaxation Schemes

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

In this paper we derive diffusive relaxation schemes for the linear semiconductor Boltzmann equation that work in both the kinetic and diffusive regimes. Similar to our earlier approach for multiscale transport equations, we use the even- and odd-parity formulation of the kinetic equation, and then reformulate it into the diffusive relaxation system (DRS). In order to handle the implicit anisotropic collision term efficiently, we utilize a suitable power series expansion based on the Wild sum, which yields a time discretization uniformly stable with any desired order of accuracy, yet is explicitly solvable with the correct drift-diffusion limit. The velocity discretization is done with the Gauss-Hermite quadrature rule equivalent to a moment expansion method. Asymptotic analysis and numerical experiments show that the schemes have the usual advantages of a diffusive relaxation scheme for multiscale transport equations and are asymptotic-preserving.

Original languageEnglish
Pages (from-to)312-330
Number of pages19
JournalJournal of Computational Physics
Volume161
Issue number1
DOIs
StatePublished - 10 Jun 2000
Externally publishedYes

Keywords

  • Diffusive relaxation schemes
  • Drift-diffusion limit
  • Semiconductor Boltzmann equation
  • Wild sums

Fingerprint

Dive into the research topics of 'Discretization of the Multiscale Semiconductor Boltzmann Equation by Diffusive Relaxation Schemes'. Together they form a unique fingerprint.

Cite this