Direct observation of intersubband relaxation in narrow multiple quantum well structures

A. Seilmeier; H. J. Hübner; M. Wörner; G. Abstreiter; G. Weimann; W. Schlapp

doi:10.1016/0038-1101(88)90385-1

Direct observation of intersubband relaxation in narrow multiple quantum well structures

A. Seilmeier, H. J. Hübner, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The intersubband relaxation in modulation doped GaAs/Al_xGa_1-xAs quantum well structures is studied by an infrared bleaching technique with picosecond time resolution. Typical intersubband relaxation times are measured to be in the order of 10 ps at 300K for subband splittings between 120 meV and 150 meV. The time constants increase with subband separation. The experimental findings are consistent with a model where polar LO phonon scattering is assumed to be the most relevant relaxation mechanism.

Original language	English
Pages (from-to)	767-770
Number of pages	4
Journal	Solid-State Electronics
Volume	31
Issue number	3-4
DOIs	https://doi.org/10.1016/0038-1101(88)90385-1
State	Published - 1988

Keywords

Picosecond spectroscopy
bleaching technique
carrier relaxation
carrier-LO phonon interaction
direct intersubband excitation
intersubband relaxation
quantum wells

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10.1016/0038-1101(88)90385-1

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title = "Direct observation of intersubband relaxation in narrow multiple quantum well structures",

abstract = "The intersubband relaxation in modulation doped GaAs/AlxGa1-xAs quantum well structures is studied by an infrared bleaching technique with picosecond time resolution. Typical intersubband relaxation times are measured to be in the order of 10 ps at 300K for subband splittings between 120 meV and 150 meV. The time constants increase with subband separation. The experimental findings are consistent with a model where polar LO phonon scattering is assumed to be the most relevant relaxation mechanism.",

keywords = "Picosecond spectroscopy, bleaching technique, carrier relaxation, carrier-LO phonon interaction, direct intersubband excitation, intersubband relaxation, quantum wells",

author = "A. Seilmeier and H{\"u}bner, {H. J.} and M. W{\"o}rner and G. Abstreiter and G. Weimann and W. Schlapp",

year = "1988",

doi = "10.1016/0038-1101(88)90385-1",

language = "English",

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pages = "767--770",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Direct observation of intersubband relaxation in narrow multiple quantum well structures

AU - Seilmeier, A.

AU - Hübner, H. J.

AU - Wörner, M.

AU - Abstreiter, G.

AU - Weimann, G.

AU - Schlapp, W.

PY - 1988

Y1 - 1988

N2 - The intersubband relaxation in modulation doped GaAs/AlxGa1-xAs quantum well structures is studied by an infrared bleaching technique with picosecond time resolution. Typical intersubband relaxation times are measured to be in the order of 10 ps at 300K for subband splittings between 120 meV and 150 meV. The time constants increase with subband separation. The experimental findings are consistent with a model where polar LO phonon scattering is assumed to be the most relevant relaxation mechanism.

AB - The intersubband relaxation in modulation doped GaAs/AlxGa1-xAs quantum well structures is studied by an infrared bleaching technique with picosecond time resolution. Typical intersubband relaxation times are measured to be in the order of 10 ps at 300K for subband splittings between 120 meV and 150 meV. The time constants increase with subband separation. The experimental findings are consistent with a model where polar LO phonon scattering is assumed to be the most relevant relaxation mechanism.

KW - Picosecond spectroscopy

KW - bleaching technique

KW - carrier relaxation

KW - carrier-LO phonon interaction

KW - direct intersubband excitation

KW - intersubband relaxation

KW - quantum wells

UR - http://www.scopus.com/inward/record.url?scp=0023978947&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(88)90385-1

DO - 10.1016/0038-1101(88)90385-1

M3 - Article

AN - SCOPUS:0023978947

SN - 0038-1101

VL - 31

SP - 767

EP - 770

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3-4

ER -

Direct observation of intersubband relaxation in narrow multiple quantum well structures

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Keywords

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