Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange

B. I. Birajdar; T. Antesberger; B. Butz; M. Stutzmann; E. Spiecker

doi:10.1016/j.scriptamat.2011.12.045

Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange

B. I. Birajdar, T. Antesberger, B. Butz, M. Stutzmann, E. Spiecker

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the crystallization front were observed. Stress-mediated diffusion of Al is postulated to explain the experimental observations.

Original language	English
Pages (from-to)	550-553
Number of pages	4
Journal	Scripta Materialia
Volume	66
Issue number	8
DOIs	https://doi.org/10.1016/j.scriptamat.2011.12.045
State	Published - Apr 2012

Keywords

Analytical electron microscopy
Crystallization
Diffusion
Solar cells
Thin films

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10.1016/j.scriptamat.2011.12.045

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@article{cdfb8b3669714064aead11367827cdc7,

title = "Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange",

abstract = "The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the crystallization front were observed. Stress-mediated diffusion of Al is postulated to explain the experimental observations.",

keywords = "Analytical electron microscopy, Crystallization, Diffusion, Solar cells, Thin films",

author = "Birajdar, {B. I.} and T. Antesberger and B. Butz and M. Stutzmann and E. Spiecker",

year = "2012",

month = apr,

doi = "10.1016/j.scriptamat.2011.12.045",

language = "English",

volume = "66",

pages = "550--553",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "8",

}

TY - JOUR

T1 - Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange

AU - Birajdar, B. I.

AU - Antesberger, T.

AU - Butz, B.

AU - Stutzmann, M.

AU - Spiecker, E.

PY - 2012/4

Y1 - 2012/4

N2 - The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the crystallization front were observed. Stress-mediated diffusion of Al is postulated to explain the experimental observations.

AB - The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the crystallization front were observed. Stress-mediated diffusion of Al is postulated to explain the experimental observations.

KW - Analytical electron microscopy

KW - Crystallization

KW - Diffusion

KW - Solar cells

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84857640217&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2011.12.045

DO - 10.1016/j.scriptamat.2011.12.045

M3 - Article

AN - SCOPUS:84857640217

SN - 1359-6462

VL - 66

SP - 550

EP - 553

JO - Scripta Materialia

JF - Scripta Materialia

IS - 8

ER -

Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange

Abstract

Keywords

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