Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates

T. Huttner; R. Mahnkopf; H. Wurzer; S. Pindl; G. Abstreiter

Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates

T. Huttner
, R. Mahnkopf
, H. Wurzer
, S. Pindl
, G. Abstreiter

Siemens AG

Research output: Contribution to conference › Paper › peer-review

Abstract

The damaging of the buried oxide in ultrathin n-channel SOI-MOSFETs during front channel hot carrier stress is investigated by comparing the magnitude of the different damaging mechanisms in identically processed devices on separation by implantation of oxygen (SIMOX) and two different BESOI substrates. The SIMOX substrate shows slightly stronger hole trapping, whereas in the BESOI substrates more significant interface state generation occurs.

Original language	English
Pages	66-67
Number of pages	2
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: 6 Oct 1997 → 9 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE International SOI Conference
City	Fish Camp, CA, USA
Period	6/10/97 → 9/10/97

Cite this

@conference{dd913716153b41cebf704cdb728d23c7,

title = "Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates",

abstract = "The damaging of the buried oxide in ultrathin n-channel SOI-MOSFETs during front channel hot carrier stress is investigated by comparing the magnitude of the different damaging mechanisms in identically processed devices on separation by implantation of oxygen (SIMOX) and two different BESOI substrates. The SIMOX substrate shows slightly stronger hole trapping, whereas in the BESOI substrates more significant interface state generation occurs.",

author = "T. Huttner and R. Mahnkopf and H. Wurzer and S. Pindl and G. Abstreiter",

year = "1997",

language = "English",

pages = "66--67",

note = "Proceedings of the 1997 IEEE International SOI Conference ; Conference date: 06-10-1997 Through 09-10-1997",

}

TY - CONF

T1 - Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates

AU - Huttner, T.

AU - Mahnkopf, R.

AU - Wurzer, H.

AU - Pindl, S.

AU - Abstreiter, G.

PY - 1997

Y1 - 1997

N2 - The damaging of the buried oxide in ultrathin n-channel SOI-MOSFETs during front channel hot carrier stress is investigated by comparing the magnitude of the different damaging mechanisms in identically processed devices on separation by implantation of oxygen (SIMOX) and two different BESOI substrates. The SIMOX substrate shows slightly stronger hole trapping, whereas in the BESOI substrates more significant interface state generation occurs.

AB - The damaging of the buried oxide in ultrathin n-channel SOI-MOSFETs during front channel hot carrier stress is investigated by comparing the magnitude of the different damaging mechanisms in identically processed devices on separation by implantation of oxygen (SIMOX) and two different BESOI substrates. The SIMOX substrate shows slightly stronger hole trapping, whereas in the BESOI substrates more significant interface state generation occurs.

UR - https://www.scopus.com/pages/publications/0031363071

M3 - Paper

AN - SCOPUS:0031363071

SP - 66

EP - 67

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates

Abstract

Conference

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