Abstract
The damaging of the buried oxide in ultrathin n-channel SOI-MOSFETs during front channel hot carrier stress is investigated by comparing the magnitude of the different damaging mechanisms in identically processed devices on separation by implantation of oxygen (SIMOX) and two different BESOI substrates. The SIMOX substrate shows slightly stronger hole trapping, whereas in the BESOI substrates more significant interface state generation occurs.
| Original language | English |
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| Pages | 66-67 |
| Number of pages | 2 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: 6 Oct 1997 → 9 Oct 1997 |
Conference
| Conference | Proceedings of the 1997 IEEE International SOI Conference |
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| City | Fish Camp, CA, USA |
| Period | 6/10/97 → 9/10/97 |