Dielectric properties of thermal and plasma-assisted atomic layer deposited Al2 O3 thin Films

K. B. Jinesh; J. L. Van Hemmen; M. C.M. Van De Sanden; F. Roozeboom; J. H. Klootwijk; W. F.A. Besling; W. M.M. Kessels

doi:10.1149/1.3517430

Dielectric properties of thermal and plasma-assisted atomic layer deposited Al₂ O₃ thin Films

K. B. Jinesh
, J. L. Van Hemmen
, M. C.M. Van De Sanden
, F. Roozeboom
, J. H. Klootwijk
, W. F.A. Besling
, W. M.M. Kessels

NXP-Semiconductors Nijmegen-The Netherlands
Energy Research Institute at Nanyang Technological University (ERIatN)
Eindhoven University of Technology
Philips Eindhoven

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

A comparative electrical characterization study of aluminum oxide (Al ₂ O₃) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al₂ O₃ deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity (k=8.8), than the thermal ALD Al₂ O₃. Remarkably, the plasma-assisted ALD Al₂ O₃ films exhibit more negative fixed oxide charge density than the thermal ALD Al₂ O₃ layers. In addition, it is shown that plasma-assisted ALD Al₂ O ₃ exhibits negligible trap-assisted (Poole-Frenkel) conduction unlike the thermal ALD Al₂ O₃ films, resulting in higher breakdown electric fields than the thermal ALD prepared films.

Original language	English
Pages (from-to)	G21-G26
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	2
DOIs	https://doi.org/10.1149/1.3517430
State	Published - 2011
Externally published	Yes

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title = "Dielectric properties of thermal and plasma-assisted atomic layer deposited Al2 O3 thin Films",

abstract = "A comparative electrical characterization study of aluminum oxide (Al 2 O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2 O3 deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity (k=8.8), than the thermal ALD Al2 O3. Remarkably, the plasma-assisted ALD Al2 O3 films exhibit more negative fixed oxide charge density than the thermal ALD Al2 O3 layers. In addition, it is shown that plasma-assisted ALD Al2 O 3 exhibits negligible trap-assisted (Poole-Frenkel) conduction unlike the thermal ALD Al2 O3 films, resulting in higher breakdown electric fields than the thermal ALD prepared films.",

author = "Jinesh, \{K. B.\} and \{Van Hemmen\}, \{J. L.\} and \{Van De Sanden\}, \{M. C.M.\} and F. Roozeboom and Klootwijk, \{J. H.\} and Besling, \{W. F.A.\} and Kessels, \{W. M.M.\}",

year = "2011",

doi = "10.1149/1.3517430",

language = "English",

volume = "158",

pages = "G21--G26",

journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - Dielectric properties of thermal and plasma-assisted atomic layer deposited Al2 O3 thin Films

AU - Jinesh, K. B.

AU - Van Hemmen, J. L.

AU - Van De Sanden, M. C.M.

AU - Roozeboom, F.

AU - Klootwijk, J. H.

AU - Besling, W. F.A.

AU - Kessels, W. M.M.

PY - 2011

Y1 - 2011

N2 - A comparative electrical characterization study of aluminum oxide (Al 2 O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2 O3 deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity (k=8.8), than the thermal ALD Al2 O3. Remarkably, the plasma-assisted ALD Al2 O3 films exhibit more negative fixed oxide charge density than the thermal ALD Al2 O3 layers. In addition, it is shown that plasma-assisted ALD Al2 O 3 exhibits negligible trap-assisted (Poole-Frenkel) conduction unlike the thermal ALD Al2 O3 films, resulting in higher breakdown electric fields than the thermal ALD prepared films.

AB - A comparative electrical characterization study of aluminum oxide (Al 2 O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2 O3 deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity (k=8.8), than the thermal ALD Al2 O3. Remarkably, the plasma-assisted ALD Al2 O3 films exhibit more negative fixed oxide charge density than the thermal ALD Al2 O3 layers. In addition, it is shown that plasma-assisted ALD Al2 O 3 exhibits negligible trap-assisted (Poole-Frenkel) conduction unlike the thermal ALD Al2 O3 films, resulting in higher breakdown electric fields than the thermal ALD prepared films.

UR - https://www.scopus.com/pages/publications/78650723200

U2 - 10.1149/1.3517430

DO - 10.1149/1.3517430

M3 - Article

AN - SCOPUS:78650723200

SN - 0013-4651

VL - 158

SP - G21-G26

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Dielectric properties of thermal and plasma-assisted atomic layer deposited Al₂ O₃ thin Films

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