Device reliability in analog CMOS applications

Roland Thewes; Ralf Brederlow; Christian Schluender; Peter Wieczorek; Alfred Hesener; Benno Ankele; Peter Klein; Sylvia Kessel; Werner Weber

Device reliability in analog CMOS applications

Roland Thewes
, Ralf Brederlow
, Christian Schluender
, Peter Wieczorek
, Alfred Hesener
, Benno Ankele
, Peter Klein
, Sylvia Kessel
, Werner Weber

Infineon Technologies AG

Research output: Contribution to journal › Conference article › peer-review

31 Scopus citations

Abstract

A comprehensive discussion is performed of MOSFET reliability under analog operation taking into account channel hot-carrier (CHC) stress, bias temperature (BT) instabilities, hard and soft breakdown and SILC. The conditions for the occurrence of these mechanisms and criteria for stress induced malfunction of analog circuits are discussed including the physics behind the behavior of typical analog device parameters after CHC and BT stress.

Original language	English
Pages (from-to)	81-84
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1999
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

Cite this

@article{6680dc874a76493e97ee39b7a66c299d,

title = "Device reliability in analog CMOS applications",

abstract = "A comprehensive discussion is performed of MOSFET reliability under analog operation taking into account channel hot-carrier (CHC) stress, bias temperature (BT) instabilities, hard and soft breakdown and SILC. The conditions for the occurrence of these mechanisms and criteria for stress induced malfunction of analog circuits are discussed including the physics behind the behavior of typical analog device parameters after CHC and BT stress.",

author = "Roland Thewes and Ralf Brederlow and Christian Schluender and Peter Wieczorek and Alfred Hesener and Benno Ankele and Peter Klein and Sylvia Kessel and Werner Weber",

year = "1999",

language = "English",

pages = "81--84",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Device reliability in analog CMOS applications

AU - Thewes, Roland

AU - Brederlow, Ralf

AU - Schluender, Christian

AU - Wieczorek, Peter

AU - Hesener, Alfred

AU - Ankele, Benno

AU - Klein, Peter

AU - Kessel, Sylvia

AU - Weber, Werner

PY - 1999

Y1 - 1999

N2 - A comprehensive discussion is performed of MOSFET reliability under analog operation taking into account channel hot-carrier (CHC) stress, bias temperature (BT) instabilities, hard and soft breakdown and SILC. The conditions for the occurrence of these mechanisms and criteria for stress induced malfunction of analog circuits are discussed including the physics behind the behavior of typical analog device parameters after CHC and BT stress.

AB - A comprehensive discussion is performed of MOSFET reliability under analog operation taking into account channel hot-carrier (CHC) stress, bias temperature (BT) instabilities, hard and soft breakdown and SILC. The conditions for the occurrence of these mechanisms and criteria for stress induced malfunction of analog circuits are discussed including the physics behind the behavior of typical analog device parameters after CHC and BT stress.

UR - https://www.scopus.com/pages/publications/0033307320

M3 - Conference article

AN - SCOPUS:0033307320

SN - 0163-1918

SP - 81

EP - 84

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Device reliability in analog CMOS applications

Abstract

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