Deuterium effusion measurements in doped crystalline silicon

Martin Stutzmann, Martin S. Brandt

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We describe first results for deuterium effusion from undoped and doped crystalline silicon (n- and p-type) treated in a D2 plasma under different conditions. The dependence of the effusion spectra on doping level, passivation temperature, sample bias, and preannealing are presented and the results are discussed on the basis of different D-bonding configurations in the passivated silicon samples.

Original languageEnglish
Pages (from-to)1406-1409
Number of pages4
JournalJournal of Applied Physics
Volume68
Issue number3
DOIs
StatePublished - 1990
Externally publishedYes

Fingerprint

Dive into the research topics of 'Deuterium effusion measurements in doped crystalline silicon'. Together they form a unique fingerprint.

Cite this