Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films

H. Angerer; D. Brunner; F. Freudenberg; O. Ambacher; M. Stutzmann; R. Höpler; T. Metzger; E. Born; G. Dollinger; A. Bergmaier; S. Karsch; H. J. Körner

doi:10.1063/1.119949

Determination of the Al mole fraction and the band gap bowing of epitaxial Al_xGa_1-xN films

H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzmann, R. Höpler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, H. J. Körner

TUM Emeriti of Excellence

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Abstract

Al_xGa_1-xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0≤x≤1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV.

Original language	English
Pages (from-to)	1504-1506
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	11
DOIs	https://doi.org/10.1063/1.119949
State	Published - 15 Sep 1997

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title = "Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films",

abstract = "AlxGa1-xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0≤x≤1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV.",

author = "H. Angerer and D. Brunner and F. Freudenberg and O. Ambacher and M. Stutzmann and R. H{\"o}pler and T. Metzger and E. Born and G. Dollinger and A. Bergmaier and S. Karsch and K{\"o}rner, {H. J.}",

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TY - JOUR

T1 - Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films

AU - Angerer, H.

AU - Brunner, D.

AU - Freudenberg, F.

AU - Ambacher, O.

AU - Stutzmann, M.

AU - Höpler, R.

AU - Metzger, T.

AU - Born, E.

AU - Dollinger, G.

AU - Bergmaier, A.

AU - Karsch, S.

AU - Körner, H. J.

PY - 1997/9/15

Y1 - 1997/9/15

N2 - AlxGa1-xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0≤x≤1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV.

AB - AlxGa1-xN alloys were grown on c-plane sapphire by plasma-induced molecular beam epitaxy. The Al content x was varied over the whole composition range (0≤x≤1). The molar Al fraction was deduced from x-ray diffraction and for comparison by elastic recoil detection analysis. The composition of the alloys calculated from the lattice parameter c underestimates x. This is due to a deformation of the unit cell. The exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections. The results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system. In addition, the deviation of the band gap from a linear dependence on x was investigated. We found a downward bowing with a bowing parameter b=1.3 eV.

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ER -

Determination of the Al mole fraction and the band gap bowing of epitaxial Al_xGa_1-xN films

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