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Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices

  • J. W. Cockburn
  • , J. J. Finley
  • , M. S. Skolnick
  • , P. Wisniewski
  • , R. Grey
  • , G. Hill
  • , M. A. Pate

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report the results of hot electron electroluminescence (EL) experiments carried out on p-i-n GaAs/AlGaAs single barrier tunneling structures. The EL spectra show peaks arising from recombination of both ballistic and intervalley-scattered electrons with neutral acceptors in the p-type collector region. From the relative intensities of these EL features we have obtained direct spectroscopic measurements of the Γ-L and Γ-X intervalley scattering times for high energy ballistic electrons in GaAs.

Original languageEnglish
Pages (from-to)622-624
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number5
DOIs
StatePublished - 3 Feb 1997
Externally publishedYes

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