Abstract
We report the results of hot electron electroluminescence (EL) experiments carried out on p-i-n GaAs/AlGaAs single barrier tunneling structures. The EL spectra show peaks arising from recombination of both ballistic and intervalley-scattered electrons with neutral acceptors in the p-type collector region. From the relative intensities of these EL features we have obtained direct spectroscopic measurements of the Γ-L and Γ-X intervalley scattering times for high energy ballistic electrons in GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 622-624 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 5 |
| DOIs | |
| State | Published - 3 Feb 1997 |
| Externally published | Yes |
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