Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices

J. W. Cockburn; J. J. Finley; M. S. Skolnick; P. Wisniewski; R. Grey; G. Hill; M. A. Pate

doi:10.1063/1.118291

Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices

J. W. Cockburn, J. J. Finley, M. S. Skolnick, P. Wisniewski, R. Grey, G. Hill, M. A. Pate

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Abstract

We report the results of hot electron electroluminescence (EL) experiments carried out on p-i-n GaAs/AlGaAs single barrier tunneling structures. The EL spectra show peaks arising from recombination of both ballistic and intervalley-scattered electrons with neutral acceptors in the p-type collector region. From the relative intensities of these EL features we have obtained direct spectroscopic measurements of the Γ-L and Γ-X intervalley scattering times for high energy ballistic electrons in GaAs.

Original language	English
Pages (from-to)	622-624
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	5
DOIs	https://doi.org/10.1063/1.118291
State	Published - 3 Feb 1997
Externally published	Yes

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title = "Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices",

abstract = "We report the results of hot electron electroluminescence (EL) experiments carried out on p-i-n GaAs/AlGaAs single barrier tunneling structures. The EL spectra show peaks arising from recombination of both ballistic and intervalley-scattered electrons with neutral acceptors in the p-type collector region. From the relative intensities of these EL features we have obtained direct spectroscopic measurements of the Γ-L and Γ-X intervalley scattering times for high energy ballistic electrons in GaAs.",

author = "Cockburn, {J. W.} and Finley, {J. J.} and Skolnick, {M. S.} and P. Wisniewski and R. Grey and G. Hill and Pate, {M. A.}",

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T1 - Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices

AU - Cockburn, J. W.

AU - Finley, J. J.

AU - Skolnick, M. S.

AU - Wisniewski, P.

AU - Grey, R.

AU - Hill, G.

AU - Pate, M. A.

PY - 1997/2/3

Y1 - 1997/2/3

N2 - We report the results of hot electron electroluminescence (EL) experiments carried out on p-i-n GaAs/AlGaAs single barrier tunneling structures. The EL spectra show peaks arising from recombination of both ballistic and intervalley-scattered electrons with neutral acceptors in the p-type collector region. From the relative intensities of these EL features we have obtained direct spectroscopic measurements of the Γ-L and Γ-X intervalley scattering times for high energy ballistic electrons in GaAs.

AB - We report the results of hot electron electroluminescence (EL) experiments carried out on p-i-n GaAs/AlGaAs single barrier tunneling structures. The EL spectra show peaks arising from recombination of both ballistic and intervalley-scattered electrons with neutral acceptors in the p-type collector region. From the relative intensities of these EL features we have obtained direct spectroscopic measurements of the Γ-L and Γ-X intervalley scattering times for high energy ballistic electrons in GaAs.

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U2 - 10.1063/1.118291

DO - 10.1063/1.118291

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SP - 622

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices

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