Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy

Th Englert; G. Abstreiter; J. Pontcharra

doi:10.1016/0038-1101(80)90164-1

Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy

Th Englert
, G. Abstreiter
, J. Pontcharra

Max Planck Institute for Solid State Research
LETI, CEN Grenoble

Research output: Contribution to journal › Article › peer-review

220 Scopus citations

Abstract

Raman spectroscopy is used to determine built-in stresses in silicon on sapphire (SOS) devices. The method is direct, nondestructive and can be applied at various temperatures. For epitaxial silicon films on sapphire substrates a built-in stress of 7.0±0.3 kbar at room temperature and 8.7±0.3 kbar at liquid nitrogen temperature was measured.

Original language	English
Pages (from-to)	31-33
Number of pages	3
Journal	Solid-State Electronics
Volume	23
Issue number	1
DOIs	https://doi.org/10.1016/0038-1101(80)90164-1
State	Published - Jan 1980
Externally published	Yes

Access to Document

10.1016/0038-1101(80)90164-1

Cite this

@article{48a2d1be2b57409584d8e41a5e0049c8,

title = "Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy",

abstract = "Raman spectroscopy is used to determine built-in stresses in silicon on sapphire (SOS) devices. The method is direct, nondestructive and can be applied at various temperatures. For epitaxial silicon films on sapphire substrates a built-in stress of 7.0±0.3 kbar at room temperature and 8.7±0.3 kbar at liquid nitrogen temperature was measured.",

author = "Th Englert and G. Abstreiter and J. Pontcharra",

year = "1980",

month = jan,

doi = "10.1016/0038-1101(80)90164-1",

language = "English",

volume = "23",

pages = "31--33",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "1",

}

TY - JOUR

T1 - Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy

AU - Englert, Th

AU - Abstreiter, G.

AU - Pontcharra, J.

PY - 1980/1

Y1 - 1980/1

N2 - Raman spectroscopy is used to determine built-in stresses in silicon on sapphire (SOS) devices. The method is direct, nondestructive and can be applied at various temperatures. For epitaxial silicon films on sapphire substrates a built-in stress of 7.0±0.3 kbar at room temperature and 8.7±0.3 kbar at liquid nitrogen temperature was measured.

AB - Raman spectroscopy is used to determine built-in stresses in silicon on sapphire (SOS) devices. The method is direct, nondestructive and can be applied at various temperatures. For epitaxial silicon films on sapphire substrates a built-in stress of 7.0±0.3 kbar at room temperature and 8.7±0.3 kbar at liquid nitrogen temperature was measured.

UR - https://www.scopus.com/pages/publications/0018925292

U2 - 10.1016/0038-1101(80)90164-1

DO - 10.1016/0038-1101(80)90164-1

M3 - Article

AN - SCOPUS:0018925292

SN - 0038-1101

VL - 23

SP - 31

EP - 33

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this