TY - JOUR
T1 - Design of low-voltage MOSFET-only ΣΔ modulators in standard digital CMOS technology
AU - Tille, Thomas
AU - Sauerbrey, Jens
AU - Mauthe, Manfred
AU - Schmitt-Landsiedel, Doris
PY - 2004/1
Y1 - 2004/1
N2 - A design strategy of low-voltage high-linearity MOSFET-only ΣΔ modulators in standard digital CMOS technology is presented. The modulators use substrate-biased MOSFETs in the depletion region as capacitors, linearized by different compensation techniques. This work shows the design, simulation and measured results of a number of MOSFET-only ΣΔ modulators using different implementations of so called compensated depletion-mode MOS capacitors. The modulators are designed for the demands of speech band applications. The performance of the modulators proves the capability of compensated depletion-mode MOS capacitors to fulfill analog circuit requirements at low supply voltages with reduced processing efforts.
AB - A design strategy of low-voltage high-linearity MOSFET-only ΣΔ modulators in standard digital CMOS technology is presented. The modulators use substrate-biased MOSFETs in the depletion region as capacitors, linearized by different compensation techniques. This work shows the design, simulation and measured results of a number of MOSFET-only ΣΔ modulators using different implementations of so called compensated depletion-mode MOS capacitors. The modulators are designed for the demands of speech band applications. The performance of the modulators proves the capability of compensated depletion-mode MOS capacitors to fulfill analog circuit requirements at low supply voltages with reduced processing efforts.
UR - http://www.scopus.com/inward/record.url?scp=4644223559&partnerID=8YFLogxK
U2 - 10.1109/TCSI.2003.821296
DO - 10.1109/TCSI.2003.821296
M3 - Article
AN - SCOPUS:4644223559
SN - 1057-7122
VL - 51
SP - 96
EP - 109
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
IS - 1
ER -