Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies

M. Fulde; M. Wirnshofer; G. Knoblinger; D. Schmitt-Landsiedel

doi:10.1109/ISCAS.2009.5118318

Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies

M. Fulde, M. Wirnshofer, G. Knoblinger, D. Schmitt-Landsiedel

Medicine and Health

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This paper presents design considerations and measurement results for low voltage bandgap reference circuits in a recent multi-gate CMOS technology. Gated p-i-n diodes are used as basic elements, a corresponding model covering temperature dependence is derived. The impact of non-idealities and process variations on circuit performance is analyzed, design guidelines are derived. Low g_ds of current source transistors, low Op-Amp offset and sufficient gain are identified as main parameters for optimization of multi-gate bandgap performance. The feasibility of low voltage bandgap references in multi-gate technology is proven by measurement results. Bandgap references with PSRR of 40dB and TC of 56μV/°C are shown.

Original language	English
Title of host publication	2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Pages	2537-2540
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2009.5118318
State	Published - 2009
Event	2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 - Taipei, Taiwan, Province of China Duration: 24 May 2009 → 27 May 2009

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Country/Territory	Taiwan, Province of China
City	Taipei
Period	24/05/09 → 27/05/09

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10.1109/ISCAS.2009.5118318

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Fulde, M., Wirnshofer, M., Knoblinger, G., & Schmitt-Landsiedel, D. (2009). Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies. In 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 (pp. 2537-2540). Article 5118318 (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2009.5118318

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title = "Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies",

abstract = "This paper presents design considerations and measurement results for low voltage bandgap reference circuits in a recent multi-gate CMOS technology. Gated p-i-n diodes are used as basic elements, a corresponding model covering temperature dependence is derived. The impact of non-idealities and process variations on circuit performance is analyzed, design guidelines are derived. Low gds of current source transistors, low Op-Amp offset and sufficient gain are identified as main parameters for optimization of multi-gate bandgap performance. The feasibility of low voltage bandgap references in multi-gate technology is proven by measurement results. Bandgap references with PSRR of 40dB and TC of 56μV/°C are shown.",

author = "M. Fulde and M. Wirnshofer and G. Knoblinger and D. Schmitt-Landsiedel",

year = "2009",

doi = "10.1109/ISCAS.2009.5118318",

language = "English",

isbn = "9781424438280",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "2537--2540",

booktitle = "2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009",

note = "2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 ; Conference date: 24-05-2009 Through 27-05-2009",

}

Fulde, M, Wirnshofer, M, Knoblinger, G & Schmitt-Landsiedel, D 2009, Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies. in 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009., 5118318, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 2537-2540, 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009, Taipei, Taiwan, Province of China, 24/05/09. https://doi.org/10.1109/ISCAS.2009.5118318

Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies. / Fulde, M.; Wirnshofer, M.; Knoblinger, G. et al.
2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009. 2009. p. 2537-2540 5118318 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper presents design considerations and measurement results for low voltage bandgap reference circuits in a recent multi-gate CMOS technology. Gated p-i-n diodes are used as basic elements, a corresponding model covering temperature dependence is derived. The impact of non-idealities and process variations on circuit performance is analyzed, design guidelines are derived. Low gds of current source transistors, low Op-Amp offset and sufficient gain are identified as main parameters for optimization of multi-gate bandgap performance. The feasibility of low voltage bandgap references in multi-gate technology is proven by measurement results. Bandgap references with PSRR of 40dB and TC of 56μV/°C are shown.

AB - This paper presents design considerations and measurement results for low voltage bandgap reference circuits in a recent multi-gate CMOS technology. Gated p-i-n diodes are used as basic elements, a corresponding model covering temperature dependence is derived. The impact of non-idealities and process variations on circuit performance is analyzed, design guidelines are derived. Low gds of current source transistors, low Op-Amp offset and sufficient gain are identified as main parameters for optimization of multi-gate bandgap performance. The feasibility of low voltage bandgap references in multi-gate technology is proven by measurement results. Bandgap references with PSRR of 40dB and TC of 56μV/°C are shown.

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BT - 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009

T2 - 2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009

Y2 - 24 May 2009 through 27 May 2009

ER -

Design of low-voltage bandgap reference circuits in multi-gate CMOS technologies

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