TY - JOUR
T1 - Design and Simulation of Novel Low-Voltage CMOS Vertical Hall Devices with Capacitively Coupled Measuring Contacts
AU - Okeil, Hesham
AU - Schrag, Gabriele
AU - Wachutka, Gerhard
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/12
Y1 - 2020/12
N2 - In this article, we introduce the novel concept of capacitively coupled measuring contacts (CCMCs) for microscaled vertical Hall sensors. Using dedicated numerical simulations, we show how this concept results in shaping and consequent focusing of the Hall potential into the measuring contacts and, in addition, strongly reduces the parasitic short-circuit current flowing into the measuring contacts. We use these effects purposefully for the design of novel low-voltage CMOS vertical Hall sensors with high magnetic sensitivity. The shallow well along with the CCMCs confines the sensor response to a small active region, which shows potential for a wide range of applications.
AB - In this article, we introduce the novel concept of capacitively coupled measuring contacts (CCMCs) for microscaled vertical Hall sensors. Using dedicated numerical simulations, we show how this concept results in shaping and consequent focusing of the Hall potential into the measuring contacts and, in addition, strongly reduces the parasitic short-circuit current flowing into the measuring contacts. We use these effects purposefully for the design of novel low-voltage CMOS vertical Hall sensors with high magnetic sensitivity. The shallow well along with the CCMCs confines the sensor response to a small active region, which shows potential for a wide range of applications.
KW - Hall potential focusing
KW - low-voltage CMOS
KW - vertical Hall sensor
UR - http://www.scopus.com/inward/record.url?scp=85097439701&partnerID=8YFLogxK
U2 - 10.1109/TED.2020.3029024
DO - 10.1109/TED.2020.3029024
M3 - Article
AN - SCOPUS:85097439701
SN - 0018-9383
VL - 67
SP - 5653
EP - 5661
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
M1 - 9238452
ER -