Design and Performance of Power Amplifier Integration with BAW Filter on a Silicon-Ceramic Composite and Standard Epoxy/Glass Substrate

V. Chauhan, L. W. Wandji, X. Peng, V. Silva Cortes, A. Frank, M. Fischer, U. Stehr, R. Weigel, A. Hagelauer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In radio frequency (RF) integrated circuits for LTE transmitters (Tx), the consideration of the thermal and nonlinear coupling between the Power Amplifier (PA) and adjacent RF filters realized by Bulk Acoustic Wave (BAW) technology is crucial for reliability and requires special attention. A co-design of Gallium Arsenide (GaAs) PA, BAW Tx filter with optimum matching network is created on two substrate technologies. One design utilizes a novel silicon-ceramic (SiCer) platform which combines a stack of low temperature co-fired ceramic (LTCC) layers with a thin silicon wafer in a single composite substrate and the second design uses standard woven glass/epoxy substrate technology. The linear performance of the different substrate technologies are compared with the same layout design. The BAW filter is based on Solidly Mounted Resonators (SMR) electrically coupled in a ladder type topology.

Original languageEnglish
Title of host publication2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538655696
DOIs
StatePublished - 6 Sep 2018
Externally publishedYes
Event2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 - Ann Arbor, United States
Duration: 16 Jul 201818 Jul 2018

Publication series

Name2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

Conference

Conference2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
Country/TerritoryUnited States
CityAnn Arbor
Period16/07/1818/07/18

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