@inproceedings{5d4695073fdc4aadbb3b8c169ddf1de3,
title = "Design and optimization of vertical CEO-T-FETs with atomically precise ultrashort gates by simulation with quantum transport models",
abstract = "The cleaved-edge overgrowth (CEO) technique offers an innovative approach to designing novel quantum sized field-effect transistors (FETs) with a T-like gate-to-channel structure. Numerical simulations of vertical CEO-T-FETs have been carried out to optimize the structure and predict device performance. For the simulation the 2D/3D device simulator SIMBA is used, which is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations.",
author = "J. H{\"o}ntschel and W. Klix and R. Stenzel and F. Ertl and G. Abstreiter",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994684",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "1501--1502",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}