Depth profiling of defects in a-Si:H by photothermal deflection spectroscopy

A. Asano, M. Stutzmann

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The amplitude of interference fringes in optical absorption spectra for thin films has been analyzed in the range of low absorption coefficients and was found to be related to a depth profile of absorbers, e.g. defects. This method has been applied to the sub-bandgap optical absorption spectra measured by photothermal deflection spectroscopy for a-Si:H thin films. It is shown that the analysis of interference fringes provides unique information about surface and interface defects in this material.

Original languageEnglish
Pages (from-to)623-626
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
StatePublished - 1991
Externally publishedYes

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