Abstract
The amplitude of interference fringes in optical absorption spectra for thin films has been analyzed in the range of low absorption coefficients and was found to be related to a depth profile of absorbers, e.g. defects. This method has been applied to the sub-bandgap optical absorption spectra measured by photothermal deflection spectroscopy for a-Si:H thin films. It is shown that the analysis of interference fringes provides unique information about surface and interface defects in this material.
Original language | English |
---|---|
Pages (from-to) | 623-626 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 137-138 |
Issue number | PART 1 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |