Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition

Stephan Altmannshofer; Bastian Miller; Alexander W. Holleitner; Jamila Boudaden; Ignaz Eisele; Christoph Kutter

doi:10.1016/j.tsf.2017.10.031

Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition

Stephan Altmannshofer, Bastian Miller, Alexander W. Holleitner, Jamila Boudaden, Ignaz Eisele, Christoph Kutter

Chair of Nanotechnology and Nanomaterials

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A microwave plasma enhanced chemical vapor deposition (microwave PECVD) process has been investigated to deposit micro crystalline silicon films with a high growth rate from silane (SiH₄). A three-layer Bruggeman-Effective-Medium-Approximation (BEMA) model was developed to describe the complex structure of the grown films. The model was confirmed by Raman and spectroscopic ellipsometry measurements. In addition the surface evolution was characterized by AFM (Atomic Force Microscopy) and spectroscopic ellipsometry data. Particular emphasis is given to the correlation between the structural film properties and the deposition parameters. Besides chemical reactions, it is shown that ion bombardment plays an important role for the crystallinity of the grown silicon films. In the presence of ions, hydrogen radicals are able to etch silicon, which significantly improves the crystallinity of the deposited films. If just radicals are present, the deposited films become amorphous.

Original language	English
Pages (from-to)	180-186
Number of pages	7
Journal	Thin Solid Films
Volume	645
DOIs	https://doi.org/10.1016/j.tsf.2017.10.031
State	Published - 1 Jan 2018

Keywords

Microwave plasma
Plasma enhanced chemical vapor deposition
Spectroscopic ellipsometry
μc-Silicon

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10.1016/j.tsf.2017.10.031

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title = "Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition",

abstract = "A microwave plasma enhanced chemical vapor deposition (microwave PECVD) process has been investigated to deposit micro crystalline silicon films with a high growth rate from silane (SiH4). A three-layer Bruggeman-Effective-Medium-Approximation (BEMA) model was developed to describe the complex structure of the grown films. The model was confirmed by Raman and spectroscopic ellipsometry measurements. In addition the surface evolution was characterized by AFM (Atomic Force Microscopy) and spectroscopic ellipsometry data. Particular emphasis is given to the correlation between the structural film properties and the deposition parameters. Besides chemical reactions, it is shown that ion bombardment plays an important role for the crystallinity of the grown silicon films. In the presence of ions, hydrogen radicals are able to etch silicon, which significantly improves the crystallinity of the deposited films. If just radicals are present, the deposited films become amorphous.",

keywords = "Microwave plasma, Plasma enhanced chemical vapor deposition, Spectroscopic ellipsometry, μc-Silicon",

author = "Stephan Altmannshofer and Bastian Miller and Holleitner, {Alexander W.} and Jamila Boudaden and Ignaz Eisele and Christoph Kutter",

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doi = "10.1016/j.tsf.2017.10.031",

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T1 - Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition

AU - Altmannshofer, Stephan

AU - Miller, Bastian

AU - Holleitner, Alexander W.

AU - Boudaden, Jamila

AU - Eisele, Ignaz

AU - Kutter, Christoph

PY - 2018/1/1

Y1 - 2018/1/1

N2 - A microwave plasma enhanced chemical vapor deposition (microwave PECVD) process has been investigated to deposit micro crystalline silicon films with a high growth rate from silane (SiH4). A three-layer Bruggeman-Effective-Medium-Approximation (BEMA) model was developed to describe the complex structure of the grown films. The model was confirmed by Raman and spectroscopic ellipsometry measurements. In addition the surface evolution was characterized by AFM (Atomic Force Microscopy) and spectroscopic ellipsometry data. Particular emphasis is given to the correlation between the structural film properties and the deposition parameters. Besides chemical reactions, it is shown that ion bombardment plays an important role for the crystallinity of the grown silicon films. In the presence of ions, hydrogen radicals are able to etch silicon, which significantly improves the crystallinity of the deposited films. If just radicals are present, the deposited films become amorphous.

AB - A microwave plasma enhanced chemical vapor deposition (microwave PECVD) process has been investigated to deposit micro crystalline silicon films with a high growth rate from silane (SiH4). A three-layer Bruggeman-Effective-Medium-Approximation (BEMA) model was developed to describe the complex structure of the grown films. The model was confirmed by Raman and spectroscopic ellipsometry measurements. In addition the surface evolution was characterized by AFM (Atomic Force Microscopy) and spectroscopic ellipsometry data. Particular emphasis is given to the correlation between the structural film properties and the deposition parameters. Besides chemical reactions, it is shown that ion bombardment plays an important role for the crystallinity of the grown silicon films. In the presence of ions, hydrogen radicals are able to etch silicon, which significantly improves the crystallinity of the deposited films. If just radicals are present, the deposited films become amorphous.

KW - Microwave plasma

KW - Plasma enhanced chemical vapor deposition

KW - Spectroscopic ellipsometry

KW - μc-Silicon

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M3 - Article

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SN - 0040-6090

VL - 645

SP - 180

EP - 186

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition

Abstract

Keywords

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