Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors

S. Morkötter; N. Jeon; D. Rudolph; B. Loitsch; D. Spirkoska; E. Hoffmann; M. Döblinger; S. Matich; J. J. Finley; L. J. Lauhon; G. Abstreiter; G. Koblmüller

doi:10.1021/acs.nanolett.5b00518

Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors

S. Morkötter, N. Jeon, D. Rudolph, B. Loitsch, D. Spirkoska, E. Hoffmann, M. Döblinger, S. Matich, J. J. Finley, L. J. Lauhon, G. Abstreiter, G. Koblmüller

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62 Scopus citations

Abstract

Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 10³ cm² V^-1 s^-1. The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >10⁴-10⁵ at room temperature.

Original language	English
Pages (from-to)	3295-3302
Number of pages	8
Journal	Nano Letters
Volume	15
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.5b00518
State	Published - 13 May 2015

Keywords

Delta-doped GaAs-AlGaAs core-shell nanowires
atom probe tomography
field effect transistors
transport
two-dimensional electron gas formation

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10.1021/acs.nanolett.5b00518

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Morkötter, S., Jeon, N., Rudolph, D., Loitsch, B., Spirkoska, D., Hoffmann, E., Döblinger, M., Matich, S., Finley, J. J., Lauhon, L. J., Abstreiter, G., & Koblmüller, G. (2015). Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors. Nano Letters, 15(5), 3295-3302. https://doi.org/10.1021/acs.nanolett.5b00518

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title = "Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors",

abstract = "Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 103 cm2 V-1 s-1. The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >104-105 at room temperature.",

keywords = "Delta-doped GaAs-AlGaAs core-shell nanowires, atom probe tomography, field effect transistors, transport, two-dimensional electron gas formation",

author = "S. Mork{\"o}tter and N. Jeon and D. Rudolph and B. Loitsch and D. Spirkoska and E. Hoffmann and M. D{\"o}blinger and S. Matich and Finley, \{J. J.\} and Lauhon, \{L. J.\} and G. Abstreiter and G. Koblm{\"u}ller",

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doi = "10.1021/acs.nanolett.5b00518",

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Morkötter, S, Jeon, N, Rudolph, D, Loitsch, B, Spirkoska, D, Hoffmann, E, Döblinger, M, Matich, S, Finley, JJ, Lauhon, LJ, Abstreiter, G & Koblmüller, G 2015, 'Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors', Nano Letters, vol. 15, no. 5, pp. 3295-3302. https://doi.org/10.1021/acs.nanolett.5b00518

TY - JOUR

T1 - Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors

AU - Morkötter, S.

AU - Jeon, N.

AU - Rudolph, D.

AU - Loitsch, B.

AU - Spirkoska, D.

AU - Hoffmann, E.

AU - Döblinger, M.

AU - Matich, S.

AU - Finley, J. J.

AU - Lauhon, L. J.

AU - Abstreiter, G.

AU - Koblmüller, G.

PY - 2015/5/13

Y1 - 2015/5/13

N2 - Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 103 cm2 V-1 s-1. The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >104-105 at room temperature.

AB - Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 103 cm2 V-1 s-1. The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >104-105 at room temperature.

KW - Delta-doped GaAs-AlGaAs core-shell nanowires

KW - atom probe tomography

KW - field effect transistors

KW - transport

KW - two-dimensional electron gas formation

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DO - 10.1021/acs.nanolett.5b00518

M3 - Article

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AN - SCOPUS:84929145615

SN - 1530-6984

VL - 15

SP - 3295

EP - 3302

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors

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