Abstract
Recent results concerning spin-dependent recombination in porous silicon are described. Spin-dependent photoconductivity and optically detected magnetic resonance provide detailed information about electronic states involved in radiative and nonradiative recombination. It is shown that the radiative recombination centers in porous Si are very similar to those in annealed siloxene and in substoichiometric alloys of silicon with oxygen, nitrogen, or carbon. It is suggested that radiative recombination in these materials originates from isolated Si6-rings. In contrast, amorphous or microcrystalline silicon exhibit quite different recombination characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 1451-1458 |
| Number of pages | 8 |
| Journal | Materials Science Forum |
| Volume | 143-4 |
| Issue number | pt 3 |
| State | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: 18 Jul 1993 → 23 Jul 1993 |