Abstract
We have studied optical transitions (absorption and luminescence) in nominally undoped and Mg-doped GaN deposited by MOCVD and MBE. In the range between 3.0 and 3.4 eV, a variety of well known low-intensity luminescence lines are observed, whose origin is discussed. In particular, by comparing excitation with subgap versus above-gap laser lines as well as by combining optical subgap absorption with spectrally resolved photoconductivity, we identify localized optical transitions occurring in isolated cubic inclusions in the otherwise hexagonal GaN epitaxial layers. Implications of these structural defects for photocurrent transients are also presented.
| Original language | English |
|---|---|
| Pages (from-to) | 671-676 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 449 |
| State | Published - 1997 |
| Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996 |