Defect-related noise in AlN and AlGaN alloys

S. T.B. Goennenwein; R. Zeisel; S. Baldovino; O. Ambacher; M. S. Brandt; M. Stutzmann

doi:10.1016/S0921-4526(01)00655-X

Defect-related noise in AlN and AlGaN alloys

S. T.B. Goennenwein
, R. Zeisel
, S. Baldovino
, O. Ambacher
, M. S. Brandt
, M. Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The electronic noise properties of Si-doped AlN and Al_0.3Ga_0.7N are investigated. In AlN:Si, generation-recombination (g-r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX^- ground state are quantitatively determined from the noise measurements. In Al_0.3Ga_0.7N:Si, in addition to 1/f noise, we find two g-r noise processes. However, an unambiguous identification of their origin proves to be difficult.

Original language	English
Pages (from-to)	69-72
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00655-X
State	Published - Dec 2001

Keywords

AlN
DX-center
Electronic noise
Group-III nitrides

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10.1016/S0921-4526(01)00655-X

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@article{3ceb23dc0fd746f09516cf18bdeae891,

title = "Defect-related noise in AlN and AlGaN alloys",

abstract = "The electronic noise properties of Si-doped AlN and Al0.3Ga0.7N are investigated. In AlN:Si, generation-recombination (g-r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX- ground state are quantitatively determined from the noise measurements. In Al0.3Ga0.7N:Si, in addition to 1/f noise, we find two g-r noise processes. However, an unambiguous identification of their origin proves to be difficult.",

keywords = "AlN, DX-center, Electronic noise, Group-III nitrides",

author = "Goennenwein, \{S. T.B.\} and R. Zeisel and S. Baldovino and O. Ambacher and Brandt, \{M. S.\} and M. Stutzmann",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00655-X",

language = "English",

volume = "308-310",

pages = "69--72",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Defect-related noise in AlN and AlGaN alloys

AU - Goennenwein, S. T.B.

AU - Zeisel, R.

AU - Baldovino, S.

AU - Ambacher, O.

AU - Brandt, M. S.

AU - Stutzmann, M.

PY - 2001/12

Y1 - 2001/12

N2 - The electronic noise properties of Si-doped AlN and Al0.3Ga0.7N are investigated. In AlN:Si, generation-recombination (g-r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX- ground state are quantitatively determined from the noise measurements. In Al0.3Ga0.7N:Si, in addition to 1/f noise, we find two g-r noise processes. However, an unambiguous identification of their origin proves to be difficult.

AB - The electronic noise properties of Si-doped AlN and Al0.3Ga0.7N are investigated. In AlN:Si, generation-recombination (g-r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX- ground state are quantitatively determined from the noise measurements. In Al0.3Ga0.7N:Si, in addition to 1/f noise, we find two g-r noise processes. However, an unambiguous identification of their origin proves to be difficult.

KW - AlN

KW - DX-center

KW - Electronic noise

KW - Group-III nitrides

UR - https://www.scopus.com/pages/publications/0035670659

U2 - 10.1016/S0921-4526(01)00655-X

DO - 10.1016/S0921-4526(01)00655-X

M3 - Article

AN - SCOPUS:0035670659

SN - 0921-4526

VL - 308-310

SP - 69

EP - 72

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Defect-related noise in AlN and AlGaN alloys

Abstract

Keywords

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