Defect-induced tunnelling and the conductivity of strongly disordered systems

D. Belitz, W. Gotze

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


For a model describing the motion of a zero-temperature electron gas in an environment causing a fluctuating potential and a fluctuating effective mass, a theory is developed which allows for an approximate calculation of the particle density propagation self-consistently with momentum relaxation and defect-induced tunnelling processes. All correlation functions of the system are expressed in terms of two causal kernels for which non-linear equations are derived and solved. A detailed discussion of the influence of the defect-induced tunnelling on the mobility, in particular on mobility edges, and on the Fermi glass stiffness is given and an anomalous high-frequency tail of the dynamical conductivity is predicted.

Original languageEnglish
Article number017
Pages (from-to)981-997
Number of pages17
JournalJournal of Physics C: Solid State Physics
Issue number5
StatePublished - 1982


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