TY - JOUR
T1 - Defect density and structure of hydrogenated amorphous silicon-sulfur alloys
AU - Aljishi, S.
AU - Stutzmann, M.
AU - Jin, Shu
AU - Herrero, C.
AU - Al-Dallal, S.
AU - Hammam, M.
AU - Al-Alawi, S. M.
PY - 1989/12/2
Y1 - 1989/12/2
N2 - The electronic and structural properties of a-Si, S:H alloys are investigated. Results show that the incorporation of sulfur leads to an increase in the bandgap, an increase in bonding disorder (manifested as an increase in the width of the Raman TO phonon peak and an increase in the Urbach slope), changes in the hydrogen bonding configurations, and an increase in the total defect density. The dark and photo- conductivities of a-Si, S:H alloys are similar to those of a-Si, C:H alloys at comparable bandgap energies.
AB - The electronic and structural properties of a-Si, S:H alloys are investigated. Results show that the incorporation of sulfur leads to an increase in the bandgap, an increase in bonding disorder (manifested as an increase in the width of the Raman TO phonon peak and an increase in the Urbach slope), changes in the hydrogen bonding configurations, and an increase in the total defect density. The dark and photo- conductivities of a-Si, S:H alloys are similar to those of a-Si, C:H alloys at comparable bandgap energies.
UR - http://www.scopus.com/inward/record.url?scp=0024831494&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(89)90617-0
DO - 10.1016/0022-3093(89)90617-0
M3 - Article
AN - SCOPUS:0024831494
SN - 0022-3093
VL - 114
SP - 462
EP - 464
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 2
ER -