Deep level transient spectroscopy of synthetic type IIb diamond

R. Zeisel; C. E. Nebel; M. Stutzmann

doi:10.1063/1.368924

Deep level transient spectroscopy of synthetic type IIb diamond

R. Zeisel, C. E. Nebel, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Deep level transient spectroscopy (DLTS) and optically excited DLTS are applied to investigate the defect distribution in IIb synthetic diamond. Two defects at 0.83 and 1.25 eV above the valence band edge are detected. Capacitance-voltage measurements reveal a boron doping density of 7 × 10¹⁵ cm^-3 and a trap density at 0.83 eV of ≈ 10¹⁵ cm^-3. The results are discussed in comparison with data available in me literature.

Original language	English
Pages (from-to)	6105-6108
Number of pages	4
Journal	Journal of Applied Physics
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.368924
State	Published - 1 Dec 1998

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title = "Deep level transient spectroscopy of synthetic type IIb diamond",

abstract = "Deep level transient spectroscopy (DLTS) and optically excited DLTS are applied to investigate the defect distribution in IIb synthetic diamond. Two defects at 0.83 and 1.25 eV above the valence band edge are detected. Capacitance-voltage measurements reveal a boron doping density of 7 × 1015 cm-3 and a trap density at 0.83 eV of ≈ 1015 cm-3. The results are discussed in comparison with data available in me literature.",

author = "R. Zeisel and Nebel, {C. E.} and M. Stutzmann",

year = "1998",

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T1 - Deep level transient spectroscopy of synthetic type IIb diamond

AU - Zeisel, R.

AU - Nebel, C. E.

AU - Stutzmann, M.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Deep level transient spectroscopy (DLTS) and optically excited DLTS are applied to investigate the defect distribution in IIb synthetic diamond. Two defects at 0.83 and 1.25 eV above the valence band edge are detected. Capacitance-voltage measurements reveal a boron doping density of 7 × 1015 cm-3 and a trap density at 0.83 eV of ≈ 1015 cm-3. The results are discussed in comparison with data available in me literature.

AB - Deep level transient spectroscopy (DLTS) and optically excited DLTS are applied to investigate the defect distribution in IIb synthetic diamond. Two defects at 0.83 and 1.25 eV above the valence band edge are detected. Capacitance-voltage measurements reveal a boron doping density of 7 × 1015 cm-3 and a trap density at 0.83 eV of ≈ 1015 cm-3. The results are discussed in comparison with data available in me literature.

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DO - 10.1063/1.368924

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VL - 84

SP - 6105

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Deep level transient spectroscopy of synthetic type IIb diamond

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