Cyclotron resonance of electrons in an inversion layer on Si

G. Abstreiter; P. Kneschaurek; J. P. Kotthaus; J. F. Koch

doi:10.1103/PhysRevLett.32.104

Cyclotron resonance of electrons in an inversion layer on Si

G. Abstreiter
, P. Kneschaurek
, J. P. Kotthaus
, J. F. Koch

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.

Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Physical Review Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.32.104
State	Published - 1974

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10.1103/PhysRevLett.32.104

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title = "Cyclotron resonance of electrons in an inversion layer on Si",

abstract = "We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.",

author = "G. Abstreiter and P. Kneschaurek and Kotthaus, \{J. P.\} and Koch, \{J. F.\}",

year = "1974",

doi = "10.1103/PhysRevLett.32.104",

language = "English",

volume = "32",

pages = "104--107",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "3",

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T1 - Cyclotron resonance of electrons in an inversion layer on Si

AU - Abstreiter, G.

AU - Kneschaurek, P.

AU - Kotthaus, J. P.

AU - Koch, J. F.

PY - 1974

Y1 - 1974

N2 - We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.

AB - We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.

UR - https://www.scopus.com/pages/publications/4243227864

U2 - 10.1103/PhysRevLett.32.104

DO - 10.1103/PhysRevLett.32.104

M3 - Article

AN - SCOPUS:4243227864

SN - 0031-9007

VL - 32

SP - 104

EP - 107

JO - Physical Review Letters

JF - Physical Review Letters

IS - 3

ER -

Cyclotron resonance of electrons in an inversion layer on Si

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