Cyclotron resonance of electrons in an inversion layer on Si

G. Abstreiter; P. Kneschaurek; J. P. Kotthaus; J. F. Koch

doi:10.1103/PhysRevLett.32.104

Cyclotron resonance of electrons in an inversion layer on Si

G. Abstreiter, P. Kneschaurek, J. P. Kotthaus, J. F. Koch

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.

Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Physical Review Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.32.104
State	Published - 1974

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10.1103/PhysRevLett.32.104

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title = "Cyclotron resonance of electrons in an inversion layer on Si",

abstract = "We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.",

author = "G. Abstreiter and P. Kneschaurek and Kotthaus, {J. P.} and Koch, {J. F.}",

year = "1974",

doi = "10.1103/PhysRevLett.32.104",

language = "English",

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journal = "Physical Review Letters",

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T1 - Cyclotron resonance of electrons in an inversion layer on Si

AU - Abstreiter, G.

AU - Kneschaurek, P.

AU - Kotthaus, J. P.

AU - Koch, J. F.

PY - 1974

Y1 - 1974

N2 - We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.

AB - We have observed cyclotron resonance of electrons in an inversion layer on a (100) surface of p-type Si. The effective mass mc* is found to be about 0.21m0, compared with a bulk value of 0.1905m0. The surface mass value decreases slightly with increasing gate voltage.

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U2 - 10.1103/PhysRevLett.32.104

DO - 10.1103/PhysRevLett.32.104

M3 - Article

AN - SCOPUS:4243227864

SN - 0031-9007

VL - 32

SP - 104

EP - 107

JO - Physical Review Letters

JF - Physical Review Letters

IS - 3

ER -

Cyclotron resonance of electrons in an inversion layer on Si

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