Crystallization of 8 mol% yttria-stabilized zirconia thin-films deposited by RF-sputtering

R. Frison, S. Heiroth, J. L.M. Rupp, K. Conder, E. J. Barthazy, E. Müller, M. Horisberger, M. Döbeli, L. J. Gauckler

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

The crystallization upon thermal treatment of 8 mol% yttria-stabilized zirconia thin films deposited by RF-sputtering at room temperature is investigated. The as-deposited YSZ films are biphasic with crystallites of 5-10 nm in diameter building a columnar-like microstructure. Fully crystalline YSZ thin films are obtained after isothermal dwells in the temperature range 800-1100 C. X-ray diffraction and Raman spectroscopy demonstrate that the crystalline films have a cubic structure retained even after high-temperature annealing while a strong texture is developed. Further, a stagnating grain-growth is observed, characterized by a final grain size of about 60 nm and a micro-strain of 0.15%. Given the observed films' micro-structural stability, their application in miniaturized electrochemical devices such as micro-solid oxide fuel cells or sensors can be foreseen.

Original languageEnglish
Pages (from-to)29-36
Number of pages8
JournalSolid State Ionics
Volume232
DOIs
StatePublished - 2013
Externally publishedYes

Keywords

  • Ceramics
  • Crystallization
  • Grain growth
  • Keywords
  • RF-sputtering
  • Thin films
  • Yttria stabilized-zirconia

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