Crystal-plasticity based thermo-mechanical modeling of Al-components in integrated circuits

Keyphrases

• Integrated Circuits 100%
• Crystal Plasticity 100%
• Thermo-mechanical Modeling 100%
• Thermal Expansion 66%
• Crack Initiation 66%
• Heat Flow 66%
• Model Assembly 66%
• Path Geometry 66%
• Interlayer Dielectric 66%
• Numerical Simulation 33%
• Three Dimensional Model 33%
• Material Behavior 33%
• Loss Function 33%
• Silicon Substrate 33%
• Passivation Layer 33%
• Microstructure 33%
• Failure Mechanism 33%
• Surface Roughening 33%
• Thermo-mechanical Problem 33%
• Current Pulse 33%
• ABAQUS 33%
• Surface Crack 33%
• Thermo-mechanical Loading 33%
• Temperature-dependent Material 33%
• Grain Orientation 33%
• User Defined Material 33%
• Aluminum Conductor 33%
• Aluminum Metallization 33%
• Thermal Heat 33%

Engineering

• Integrated Circuit 100%
• Dielectrics 66%
• Crack Initiation 66%
• Interlayer 66%
• Experimental Result 33%
• Three-Dimensional Models 33%
• Silicon Substrate 33%
• Dependent Material 33%
• Passivation Layer 33%
• Metallizations 33%
• Mechanical Problem 33%
• Material Behavior 33%
• Abaqus 33%
• Thermomechanical Loads 33%
• Grain Orientation 33%
• Current Pulse 33%
• Assembly Model 33%
• Failure Mechanism 33%

Material Science

• Electronic Circuit 100%
• Crystal Plasticity 100%
• Conductor 75%
• Aluminum 75%
• Thermal Expansion 50%
• Crack Initiation 50%
• Dielectric Material 50%
• Silicon 25%
• Thermomechanical Loads 25%
• Surface (Surface Science) 25%