Abstract
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014 p/cm2 and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.
Original language | English |
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Pages (from-to) | 151-159 |
Number of pages | 9 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 447 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jun 2000 |
Event | VERTEX '99: 8th International Workshop on Vertex Detectors - Texel, Neth Duration: 20 Jun 1999 → 25 Jun 1999 |