Cryogenic operation of silicon detectors

P. Collins, I. B.M. Barnett, P. Bartalini, W. Bell, P. Berglund, W. De Boer, S. Buontempo, K. Borer, T. Bowcock, J. Buytaert, L. Casagrande, V. Chabaud, P. Chochula, V. Cindro, C. Da Via, S. Devine, H. Dijkstra, B. Dezillie, Z. Dimcovski, O. DormondV. Eremin, A. Esposito, R. Frei, V. Granata, E. Grigoriev, F. Hauler, S. Heising, S. Janos, L. Jungermann, Z. Li, C. Lourenço, M. Mikuž, T. O. Niinikoski, V. O'Shea, V. G. Palmieri, S. Paul, C. Parkes, G. Ruggiero, T. Ruf, S. Saladino, L. Schmitt, K. Smith, I. Stavitski, E. Verbitskaya, F. Vitobello, M. Zavrtanik

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5×1014 p/cm2 and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.

Original languageEnglish
Pages (from-to)151-159
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1
StatePublished - 1 Jun 2000
EventVERTEX '99: 8th International Workshop on Vertex Detectors - Texel, Neth
Duration: 20 Jun 199925 Jun 1999


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