Crack formation in YBa2Cu3O7-δ films on silicon

W. Prusseit; S. Corsépius; P. Berberich; H. Kinder

doi:10.1016/0925-8388(93)90725-3

Crack formation in YBa₂Cu₃O_7-δ films on silicon

W. Prusseit, S. Corsépius, P. Berberich, H. Kinder

Department of Physics

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Differences in the thermal expansion between epitaxially grown films and the substrate result in a considerable strain of the deposit. Whenever a certain critical film thickness is exceeded the stress is inevitably relaxed by fracture. This problem is most prominent for YBa₂Cu₃O_7-δ films deposited on silicon substrates. We have studied the mechanism of crack formation in more detail, especially the part played by the surface morphology of the YBa₂Cu₃O_7-δ films. Theoretical limits are compared with experimental findings.

Original language	English
Pages (from-to)	223-225
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	195
Issue number	C
DOIs	https://doi.org/10.1016/0925-8388(93)90725-3
State	Published - 10 May 1993

Access to Document

10.1016/0925-8388(93)90725-3

Cite this

@article{49dd75af38d24df2beb57be09c58c6a5,

title = "Crack formation in YBa2Cu3O7-δ films on silicon",

abstract = "Differences in the thermal expansion between epitaxially grown films and the substrate result in a considerable strain of the deposit. Whenever a certain critical film thickness is exceeded the stress is inevitably relaxed by fracture. This problem is most prominent for YBa2Cu3O7-δ films deposited on silicon substrates. We have studied the mechanism of crack formation in more detail, especially the part played by the surface morphology of the YBa2Cu3O7-δ films. Theoretical limits are compared with experimental findings.",

author = "W. Prusseit and S. Cors{\'e}pius and P. Berberich and H. Kinder",

note = "Funding Information: This work was supported by Bundesministerium fiir Forschung und Technologie.",

year = "1993",

month = may,

day = "10",

doi = "10.1016/0925-8388(93)90725-3",

language = "English",

volume = "195",

pages = "223--225",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

number = "C",

}

TY - JOUR

T1 - Crack formation in YBa2Cu3O7-δ films on silicon

AU - Prusseit, W.

AU - Corsépius, S.

AU - Berberich, P.

AU - Kinder, H.

N1 - Funding Information: This work was supported by Bundesministerium fiir Forschung und Technologie.

PY - 1993/5/10

Y1 - 1993/5/10

N2 - Differences in the thermal expansion between epitaxially grown films and the substrate result in a considerable strain of the deposit. Whenever a certain critical film thickness is exceeded the stress is inevitably relaxed by fracture. This problem is most prominent for YBa2Cu3O7-δ films deposited on silicon substrates. We have studied the mechanism of crack formation in more detail, especially the part played by the surface morphology of the YBa2Cu3O7-δ films. Theoretical limits are compared with experimental findings.

AB - Differences in the thermal expansion between epitaxially grown films and the substrate result in a considerable strain of the deposit. Whenever a certain critical film thickness is exceeded the stress is inevitably relaxed by fracture. This problem is most prominent for YBa2Cu3O7-δ films deposited on silicon substrates. We have studied the mechanism of crack formation in more detail, especially the part played by the surface morphology of the YBa2Cu3O7-δ films. Theoretical limits are compared with experimental findings.

UR - http://www.scopus.com/inward/record.url?scp=0027590632&partnerID=8YFLogxK

U2 - 10.1016/0925-8388(93)90725-3

DO - 10.1016/0925-8388(93)90725-3

M3 - Article

AN - SCOPUS:0027590632

SN - 0925-8388

VL - 195

SP - 223

EP - 225

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - C

ER -

Crack formation in YBa₂Cu₃O_7-δ films on silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this