Crack formation in YBa2Cu3O7-δ films on silicon

W. Prusseit, S. Corsépius, P. Berberich, H. Kinder

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Differences in the thermal expansion between epitaxially grown films and the substrate result in a considerable strain of the deposit. Whenever a certain critical film thickness is exceeded the stress is inevitably relaxed by fracture. This problem is most prominent for YBa2Cu3O7-δ films deposited on silicon substrates. We have studied the mechanism of crack formation in more detail, especially the part played by the surface morphology of the YBa2Cu3O7-δ films. Theoretical limits are compared with experimental findings.

Original languageEnglish
Pages (from-to)223-225
Number of pages3
JournalJournal of Alloys and Compounds
Issue numberC
StatePublished - 10 May 1993


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