TY - JOUR
T1 - Countermeasures against NBTI degradation on 6T-SRAM cells
AU - Glocker, E.
AU - Schmitt-Landsiedel, D.
AU - Drapatz, S.
PY - 2011
Y1 - 2011
N2 - In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability. In this paper countermeasures against this hazard are presented and quantified via simulations in 90 nm process technologies by the established metrics SNMread, SNMhold, Iread and Write Level. With regard to simulation results and practicability best candidates are chosen and, dependent on individual preferences at memory cell design, the best countermeasure in each case is recommended.
AB - In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability. In this paper countermeasures against this hazard are presented and quantified via simulations in 90 nm process technologies by the established metrics SNMread, SNMhold, Iread and Write Level. With regard to simulation results and practicability best candidates are chosen and, dependent on individual preferences at memory cell design, the best countermeasure in each case is recommended.
UR - http://www.scopus.com/inward/record.url?scp=79961047370&partnerID=8YFLogxK
U2 - 10.5194/ars-9-255-2011
DO - 10.5194/ars-9-255-2011
M3 - Article
AN - SCOPUS:79961047370
SN - 1684-9965
VL - 9
SP - 255
EP - 261
JO - Advances in Radio Science
JF - Advances in Radio Science
ER -