Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

Thomas Koester; Frank Goldschmidtboeing; Birgit Hadam; Josef Stein; Stefan Altmeyer; Bernd Spangenberg; Heinrich Kurz; Robert Neumann; Karl Brunner; Gerd Abstreiter

doi:10.1143/JJAP.38.465

Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

Thomas Koester
, Frank Goldschmidtboeing
, Birgit Hadam
, Josef Stein
, Stefan Altmeyer
, Bernd Spangenberg
, Heinrich Kurz
, Robert Neumann
, Karl Brunner
, Gerd Abstreiter

TUM Emeriti of Excellence

RWTH Aachen University
Walter Schottky Institut

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

Coulomb blockade effects are studied in highly doped molecular-beam-epitaxy grown silicon quantum wires. The nanometer structure of the single electron tunneling transistor (SETT) is fabricated by electron beam lithography (EBL), anisotropic reactive ion etching (RIE) and low temperature oxide deposition. An extended Coulomb blockade is observed even at T = 130 K in the I-V characteristics: while outside the blockade region a clear Coulomb staircase is visible. The zero-conductivity range is significantly affected by the applied gate voltage. In addition, oscillations of the Coulomb blockade with gate potential are observed. The nature of tunnel burners present in this wire is discussed.

Original language	English
Pages (from-to)	465-468
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	1 B
DOIs	https://doi.org/10.1143/JJAP.38.465
State	Published - 1999
Event	Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: 31 May 1998 → 4 Jun 1998

Keywords

BESOI
Coulomb blockade
Electron beam lithography
Molecular beam epitaxy
Silicon
Single electron tunneling transistors

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10.1143/JJAP.38.465

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Koester, T., Goldschmidtboeing, F., Hadam, B., Stein, J., Altmeyer, S., Spangenberg, B., Kurz, H., Neumann, R., Brunner, K., & Abstreiter, G. (1999). Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(1 B), 465-468. https://doi.org/10.1143/JJAP.38.465

@article{48ef4301fe6640cba2b7d98ab7c82c1c,

title = "Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material",

abstract = "Coulomb blockade effects are studied in highly doped molecular-beam-epitaxy grown silicon quantum wires. The nanometer structure of the single electron tunneling transistor (SETT) is fabricated by electron beam lithography (EBL), anisotropic reactive ion etching (RIE) and low temperature oxide deposition. An extended Coulomb blockade is observed even at T = 130 K in the I-V characteristics: while outside the blockade region a clear Coulomb staircase is visible. The zero-conductivity range is significantly affected by the applied gate voltage. In addition, oscillations of the Coulomb blockade with gate potential are observed. The nature of tunnel burners present in this wire is discussed.",

keywords = "BESOI, Coulomb blockade, Electron beam lithography, Molecular beam epitaxy, Silicon, Single electron tunneling transistors",

author = "Thomas Koester and Frank Goldschmidtboeing and Birgit Hadam and Josef Stein and Stefan Altmeyer and Bernd Spangenberg and Heinrich Kurz and Robert Neumann and Karl Brunner and Gerd Abstreiter",

year = "1999",

doi = "10.1143/JJAP.38.465",

language = "English",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "1 B",

note = "Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 ; Conference date: 31-05-1998 Through 04-06-1998",

}

Koester, T, Goldschmidtboeing, F, Hadam, B, Stein, J, Altmeyer, S, Spangenberg, B, Kurz, H, Neumann, R, Brunner, K & Abstreiter, G 1999, 'Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 38, no. 1 B, pp. 465-468. https://doi.org/10.1143/JJAP.38.465

Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material. / Koester, Thomas; Goldschmidtboeing, Frank; Hadam, Birgit et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 1 B, 1999, p. 465-468.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

AU - Koester, Thomas

AU - Goldschmidtboeing, Frank

AU - Hadam, Birgit

AU - Stein, Josef

AU - Altmeyer, Stefan

AU - Spangenberg, Bernd

AU - Kurz, Heinrich

AU - Neumann, Robert

AU - Brunner, Karl

AU - Abstreiter, Gerd

PY - 1999

Y1 - 1999

N2 - Coulomb blockade effects are studied in highly doped molecular-beam-epitaxy grown silicon quantum wires. The nanometer structure of the single electron tunneling transistor (SETT) is fabricated by electron beam lithography (EBL), anisotropic reactive ion etching (RIE) and low temperature oxide deposition. An extended Coulomb blockade is observed even at T = 130 K in the I-V characteristics: while outside the blockade region a clear Coulomb staircase is visible. The zero-conductivity range is significantly affected by the applied gate voltage. In addition, oscillations of the Coulomb blockade with gate potential are observed. The nature of tunnel burners present in this wire is discussed.

AB - Coulomb blockade effects are studied in highly doped molecular-beam-epitaxy grown silicon quantum wires. The nanometer structure of the single electron tunneling transistor (SETT) is fabricated by electron beam lithography (EBL), anisotropic reactive ion etching (RIE) and low temperature oxide deposition. An extended Coulomb blockade is observed even at T = 130 K in the I-V characteristics: while outside the blockade region a clear Coulomb staircase is visible. The zero-conductivity range is significantly affected by the applied gate voltage. In addition, oscillations of the Coulomb blockade with gate potential are observed. The nature of tunnel burners present in this wire is discussed.

KW - BESOI

KW - Coulomb blockade

KW - Electron beam lithography

KW - Molecular beam epitaxy

KW - Silicon

KW - Single electron tunneling transistors

UR - https://www.scopus.com/pages/publications/0032614303

U2 - 10.1143/JJAP.38.465

DO - 10.1143/JJAP.38.465

M3 - Conference article

AN - SCOPUS:0032614303

SN - 0021-4922

VL - 38

SP - 465

EP - 468

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 1 B

T2 - Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98

Y2 - 31 May 1998 through 4 June 1998

ER -

Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

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Keywords

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