Abstract
Optical beam induced current (OBIC) and atomic force microscopy (AFM) are applied to characterize the optoelectronic properties of microcrystalline silicon (μc-Si) thin films prepared by pulsed interference laser crystallization. The OBIC spatial resolution is about 400 nm, allowing a microscopic detection of μc-Si electronic properties. A correlation of local photoconductivity and microstructure of μc-Si on a submicron scale is presented. There is a surprising resemblance between the AFM profile of a secco etched surface with enhanced grain boundaries and OBIC spatial profiles on an untreated surface. The photocurrent response to a local focused laser beam excitation is dominated by variations in the sample thickness, which is much smaller than the absorption depth of the light used. Fine structure in the photocurrent profile is associated with the granular structure of μc-Si, the size of which is beyond the resolution of OBIC.
Original language | English |
---|---|
Pages (from-to) | 1742-1744 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 12 |
DOIs | |
State | Published - 20 Sep 1999 |